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Fused silica JGS1 wafer 4 inch 2000 um DSP

Fused Silica wafer 2000 µm

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Produktinformationen "Fused silica JGS1 wafer 4 inch 2000 um DSP"

Fused silica JGS1 wafer 4 inch (100 +0.0/-0.3 mm), thickness = 2000 ± 50 µm, rms < 0.5 nm (best effort), 2-side polished, TTV < 3 µm (best effort), no flat, S/D < 60/40, not particle specified due to cake-box packaging with sheets between the wafers