Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
MWCTI002PT020CCZZZ01
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2, metallized one side with Ti: 10 nm and Pt: 100 nm, small individual defects in the layer possible but not mandatory
Lagerbestand:
13
Ab
76,90 €*