Zu "WNA30381250B1314S051" wurden 3 Produkte gefunden
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
Ab
27,50 €*
WNA30381250B1314S051
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides
Lagerbestand:
22
Ab
27,50 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
Ab
33,00 €*
WNA30381250B1314S151
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 150 nm LPCVD Si3N4 on both sides
Lagerbestand:
18
Ab
33,00 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
Ab
45,00 €*
WNA30381250B1314S501
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 500 nm PECVD Si3N4 on one side
Lagerbestand:
18
Ab
45,00 €*