Si + Siliziumnitrid
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314S051
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides
Lagerbestand:
22
Ab
27,50 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314S151
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 150 nm LPCVD Si3N4 on both sides
Lagerbestand:
18
Ab
33,00 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314S501
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 500 nm PECVD Si3N4 on one side
Lagerbestand:
18
Ab
45,00 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314S502
Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm low-stress Si3N4
Lagerbestand:
15
Ab
46,00 €*
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
WNA30381250B1314SXX2
Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm low-stress Si3N4
Lagerbestand:
19
Ab
61,00 €*
Si + Si3N4 wafer 4 inch 200 um (100) DSP B-doped
WNA40200105B1314S061
Prime Si + Si3N4 wafer 4 inch, thickness = 200 ± 10 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 60 nm low-stress LPCVD Si3N4 (50 - 70 nm)
Lagerbestand:
53
Ab
48,00 €*
Si + Si3N4 wafer 4 inch 325 um (100) SSP B-doped
WND40325250B1314S081
Prime Si + Si3N4 wafer 4 inch, thickness = 325 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 80 nm stoichiometric LPCVD Si3N4 on both sides
Lagerbestand:
75
Ab
39,00 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
WNA40380155B1314S071
Prime Si + LPCVD Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 75 nm Si3N4
Lagerbestand:
31
Ab
44,50 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
WNA40380155B1314S151
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides
Lagerbestand:
38
Ab
37,00 €*
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
WNA40380155B1314SXX1
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides
Lagerbestand:
25
Ab
68,00 €*
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525155B1314S102
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides
Lagerbestand:
105
Ab
34,00 €*
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525155B1314S501
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 500 nm low-stress LPCVD Si3N4 on both sides
Lagerbestand:
55
Ab
50,00 €*
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525255B1314S041
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4
Lagerbestand:
0
Ab
43,00 €*
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
WNA40525255B1314S301
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 300 nm LPCVD Si3N4 on both sides
Lagerbestand:
49
Ab
39,00 €*