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MicroChemicals Silicon, Quartz, Glass and Fused Silica Wafer Stock List (Revised: 02.12.2022 17:03 MEZ)
4 Inch Silicon + SiNx Wafers (Stoichiometric or Low-stress Silicon Nitride)
| Qual. | Material | Size
(inch) | Orien-
tation | Polished | Thick-
ness (μm) | Doping | Resistivity
(ohm cm) | Coating | # available
now1/soon2 | Article Number
(WebShop) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 200 ± 10 | Boron | 1 - 10 | 60 nm | 50 / 50 | WNA40200105B1314S061 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 200 ± 10 μm, (100), 2-side polished, p-type (Boron), TTV < 5 μm, 1 - 10 Ohm cm, 60 nm low-stress LPCVD Si3N4 (50 - 70 nm) | | | Price/wafer (net): € 64.00 (5 wafers), € 58.00 (10 wafers), € 50.00 (25 wafers), € 48.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 260 ± 10 | | 10000 - 100000 | 80 nm | 24 / 24 | WNA40260100X1718S081 | | | | Prime FZ-Si + Si3N4 wafer 4 inch, thickness = 260 ± 10 μm, (100), 2-side polished, TTV < 10 μm, Bow/Warp < 30 μm, intrinsic/undoped, 10000 - 100000 Ohm cm, 80 +/- 20 nm (> 50 nm) LPCVD low-stress Si3N4 on both sides | | | Price/wafer (net): € 74.00 (5 wafers), € 66.00 (10 wafers), € 62.00 (25 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 50 nm | 14 / 14 | WNA40380155B1314S051 | | | | Prime Si + Si3N4 (low-stress) wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron). TTV < 5 μm, 1 - 10 Ohm cm, 50 nm low-stress LPCVD Si3N4 on both sides | | | Price/wafer (net): € 53.20 (5 wafers), € 47.60 (10 wafers), € 42.00 (25 wafers), € 40.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 70 nm | 25 / 25 | WNA40380155B1314S071 | | | | Prime Si + LPCVD Si3N4 wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron), TTV < 5 μm, 1 - 10 Ohm cm, 75 nm Si3N4 | | | Price/wafer (net): € 57.00 (5 wafers), € 52.00 (10 wafers), € 46.00 (25 wafers), € 44.50 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 150 nm | 50 / 50 | WNA40380155B1314S151 | | | | Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides | | | Price/wafer (net): € 52.00 (5 wafers), € 46.00 (10 wafers), € 40.00 (25 wafers), € 38.00 (50 wafers), € 37.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 300 nm | 14 / 14 | WNA40380155B1314S302 | | | | Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 300 nm low-stress LPCVD Si3N4 on both sides | | | Price/wafer (net): € 52.00 (5 wafers), € 46.00 (10 wafers), € 40.00 (25 wafers), € 38.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 400 nm | 25 / 25 | WNA40380155B1314S401 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron), TTV < 5 μm, 1 - 10 Ohm cm, 400 nm LPCVD low-stress Si3N4 on both sides | | | Price/wafer (net): € 58.00 (5 wafers), € 52.00 (10 wafers), € 46.00 (25 wafers), € 44.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 380 ± 15 | Boron | 1 - 10 | 1000 nm | 15 / 15 | WNA40380155B1314SXX1 | | | | Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides | | | Price/wafer (net): € 83.00 (5 wafers), € 78.00 (10 wafers), € 72.00 (25 wafers), € 70.00 (50 wafers), € 68.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 15 | Boron | 1 - 10 | 30 nm | 9 / 9 | WNA40525155B1314S031 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 5 μm, 1 - 10 Ohm cm, 30 nm low-stress LPCVD Si3N4 on both wafer sides | | | Price/wafer (net): € 53.20 (5 wafers), € 47.60 (10 wafers), € 42.00 (25 wafers), € 40.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 15 | Boron | 1 - 10 | 100 nm | 0 / 100 | WNA40525155B1314S102 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 μm, (100), 2-side polished, p-type (Boron), TTV < 5 μm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides | | | Price/wafer (net): € 52.00 (5 wafers), € 45.00 (10 wafers), € 38.00 (25 wafers), € 36.00 (50 wafers), € 34.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 25 | Boron | 1 - 10 | 40 nm | 11 / 11 | WNA40525255B1314S041 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, p-type (Boron), TTV < 5 μm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4 | | | Price/wafer (net): € 54.20 (5 wafers), € 48.60 (10 wafers), € 43.00 (25 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 25 | Boron | 1 - 10 | 150 nm | 35 / 35 | WNA40525255B1314S152 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, p-type (Boron) TTV < 5 μm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides !! few particles or defects underneath the nitride film visisble using a wafer inspection lamp !! | | | Price/wafer (net): € 39.00 (5 wafers), € 33.00 (10 wafers), € 27.00 (25 wafers), € 25.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 25 | Boron | 1 - 10 | 300 nm | 50 / 50 | WNA40525255B1314S301 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, p-type (Boron) TTV < 5 μm, 1 - 10 Ohm cm, 300 nm LPCVD Si3N4 on both sides - 1 carrier with 15 wafers has laser-marking on front side | | | Price/wafer (net): € 56.00 (5 wafers), € 50.00 (10 wafers), € 44.00 (25 wafers), € 42.00 (50 wafers), € 39.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | double-side | 525 ± 25 | Boron | 1 - 10 | 450 nm | 40 / 40 | WNA40525255B1314S451 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, p-type (Boron) TTV < 5 μm, 1 - 10 Ohm cm, 450 nm low-stress LPCVD Si3N4 on both sides | | | Price/wafer (net): € 5.00 (68 wafers), € 10.00 (64 wafers), € 25.00 (58 wafers), € 50.00 (56 wafers) (plus packaging / shipping) | |
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| Prime | Si + Si3N4 | 4 | (100) | one-side | 325 ± 25 | Boron | 1 - 10 | 80 nm | 25 / 25 | WND40325250B1314S081 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 325 ± 25 μm, (100), 1-side polished, p-type (Boron), TTV < 10 μm, 1 - 10 Ohm cm, 80 nm stoichiometric LPCVD Si3N4 on both sides | | | Price/wafer (net): € 53.20 (5 wafers), € 47.60 (10 wafers), € 42.00 (25 wafers), € 40.00 (50 wafers), € 39.00 (100 wafers) (plus packaging / shipping) | |
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| Dummy3 | Si + Si3N4 | 4 | (100) | double-side | 525 ± 15 | Boron | 1 - 10 | 40 nm | 25 / 25 | WNS40525155B1314S041 | | | | Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 5 μm, 1 - 10 Ohm cm, 45 nm low-stress LPCVD Si3N4 on both wafer sides, ihomogenous appearance (large-scale spots visible, maybe impurities underneath nitride coating) | | | Price/wafer (net): € 16.00 (25 wafers) (plus packaging / shipping) | |
Interested in an offer? Please send us an e-mail with the article numbers(s) (20-digit code in the right column of the table above) and number to info@microchemicals.com
1 available when this list has been revised
2 available + ordered (= available in typically few weeks)
3 Wider specified, rather cheap wafers for e. g. resist coating tests or start-up experiments for new litho-processes.
4 prices subject to change; while stocks last.
5 possibly available on demand within approx. 1 - 2 weeks.
We try to revise this stock list daily or weekly, but we cannot guarantee that it's always up-to-date.
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