MicroChemicals GmbH

MicroChemicals Silicon, Quartz, Glass and Fused Silica Wafer Stock List (Revised: 2025-02-06 04:28 MEZ)

Other wafer types (also cut wafer pieces) and technical details on request: info@microchemicals.com

	1 Inch	2 Inch	3 Inch	4 Inch	5 Inch	6 Inch	8 Inch	12 Inch	Stücke
CZ-Si	3809 Wafer	9007 Wafer	10993 Wafer	20009 Wafer	692 Wafer	14981 Wafer	7062 Wafer	823 Wafer	2599 Wafer
FZ-Si	0 Wafer	961 Wafer	665 Wafer	2909 Wafer	0 Wafer	600 Wafer	0 Wafer	0 Wafer	0 Wafer
Si+SiO2	1499 Wafer	1466 Wafer	1062 Wafer	3674 Wafer	0 Wafer	353 Wafer	0 Wafer	0 Wafer	1452 Wafer
Si+SiNx	0 Wafer	0 Wafer	98 Wafer	622 Wafer	0 Wafer	75 Wafer	0 Wafer	0 Wafer	0 Wafer
Quartz	150 Wafer	117 Wafer	136 Wafer	314 Wafer	0 Wafer	0 Wafer	0 Wafer	0 Wafer	135 Wafer
Fused Silica	1560 Wafer	4184 Wafer	826 Wafer	1894 Wafer	0 Wafer	434 Wafer	24 Wafer	0 Wafer	21837 Wafer
Glass	200 Wafer	993 Wafer	619 Wafer	2395 Wafer	0 Wafer	542 Wafer	53 Wafer	0 Wafer	3066 Wafer

4 Inch Silicon + SiO2 Wafers (Thermal Oxidation)

Qual.	Material	Size (inch)	Orien- tation	Polished	Thick- ness (μm)	Doping	Resistivity (ohm cm)	Coating	# available now¹/soon²	Article Number (WebShop)
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 20	Boron	0.001 - 0.005	290 nm	383 / 383	WTD40525205B1050S291
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 20	Boron	0.001 - 0.005	310 nm	0 / 146	WTD40525205B1050S311
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Arsenic	0.001 - 0.005	200 nm	13 / 13	WTD40525250A1050S201
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Boron	0.001 - 0.005	90 nm	52 / 52	WTD40525250B1050S091
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Boron	0.001 - 0.005	280 nm	246 / 246	WTD40525250B1050S281
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Boron	1 - 10	100 nm	170 / 170	WTD40525250B1314S102
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Boron	1 - 10	200 nm	316 / 316	WTD40525250B1314S201
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Phosphor	1 - 10	100 nm	74 / 74	WTD40525250P1314S101
Prime	Si + SiO₂ (dry)	4	(100)	one-side	525 ± 25	Boron	0.001 - 0.01	90 nm	125 / 125	WTD40525255B1011S091
Prime	Si + SiO₂ (wet)	4	(100)	double-side	525 ± 15	Boron	1 - 10	300 nm	30 / 30	WWA40525150B1314SNN2
Prime	Si + SiO₂ (wet)	4	(100)	double-side	525 ± 25	Phosphor	1 - 10	5000 nm	79 / 79	WWA40525250P1314SXX1
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Arsenic	0.001 - 0.005	300 nm	149 / 149	WWD40525250A1050S301
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	300 nm	181 / 181	WWD40525250B1314S302
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	500 nm	209 / 209	WWD40525250B1314S501
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	1000 nm	497 / 497	WWD40525250B1314SXX1
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	1500 nm	218 / 218	WWD40525250B1314SXX3
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	2000 nm	85 / 285	WWD40525250B1314SXX6
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Boron	1 - 10	5000 nm	50 / 50	WWD40525250B1314SXX8
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Phosphor	1 - 10	1000 nm	199 / 199	WWD40525250P1314SXX1
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25	Phosphor	1 - 10	2280 nm	50 / 50	WWD40525250P1314SXX2
Prime	Si + SiO₂ (wet)	4	(100)	one-side	525 ± 25		1000 - 100000	300 nm	52 / 52	WWD40525250X1618S301
Prime	Si + SiO₂ (wet)	4	(100)	one-side	625 ± 25	Phosphor	10 - 20	1000 nm	149 / 149	WWD40625250P1424SXX1
Prime	Si + SiO₂ (wet)	4	(111)	one-side	525 ± 25	Phosphor	1 - 10	1000 nm	1 / 1	WWF40525250P1314SXX1

Interested in an offer? Please send us an e-mail with the article numbers(s) (20-digit code in the right column of the table above) and number to info@microchemicals.com

¹available when this list has been revised

² available + ordered (= available in typically few weeks)

³ Wider specified, rather cheap wafers for e. g. resist coating tests or start-up experiments for new litho-processes.

⁴ prices subject to change; while stocks last.

⁵ possibly available on demand within approx. 1 - 2 weeks.

We try to revise this stock list daily or weekly, but we cannot guarantee that it's always up-to-date.