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MicroChemicals Silicon, Quartz, Glass and Fused Silica Wafer Stock List (Revised: 26.07.2024 19:12 MEZ)
4 Inch Silicon + SiO2 Wafers (Thermal Oxidation)
| Qual. | Material | Size
(inch) | Orien-
tation | Polished | Thick-
ness (μm) | Doping | Resistivity
(ohm cm) | Coating | # available
now1/soon2 | Article Number
(WebShop) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | double-side | 525 ± 25 | | 10000 - 100000 | 100 nm | 13 / 13 | WTA40525250X1718S101 | | | | Prime FZ Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, TTV < 10 μm, 10000 - 100000 Ohm cm, 100 nm SiO2 | | | Price/wafer (net): € 76.00 (5 wafers), € 70.00 (10 wafers), € 64.00 (25 wafers), € 60.00 (50 wafers), € 56.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 20 | Boron | 0.001 - 0.005 | 290 nm | 350 / 350 | WTD40525205B1050S291 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 μm, (100), 1-side polished, p-type (Boron), TTV < 5 μm, Bow/Warp < 30 μm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 μm | | | Price/wafer (net): € 36.00 (5 wafers), € 30.00 (10 wafers), € 23.00 (25 wafers), € 21.50 (50 wafers), € 20.00 (100 wafers), € 19.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 20 | Boron | 0.001 - 0.005 | 290 nm | 50 / 50 | WTD40525205B1050S293 | | | | Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 μm, (100), 1-side polished, p-type (Boron), TTV < 5 μm, Bow/Warp < 30 μm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), !! surface shows some kind of "haze" which can be cleaned !! | | | Price/wafer (net): on request | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Arsenic | 0.001 - 0.005 | 200 nm | 73 / 73 | WTD40525250A1050S201 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Arsenic) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 200 nm SiO2 | | | Price/wafer (net): € 33.00 (5 wafers), € 27.00 (10 wafers), € 21.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers), € 18.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 90 nm | 86 / 86 | WTD40525250B1050S091 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD002-XXX, XXX = 001-999) | | | Price/wafer (net): € 36.00 (5 wafers), € 30.00 (10 wafers), € 23.50 (25 wafers), € 22.00 (50 wafers), € 20.00 (150 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 280 nm | 297 / 297 | WTD40525250B1050S281 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD004-XXX, XXX = 001-999) | | | Price/wafer (net): € 37.00 (5 wafers), € 31.00 (10 wafers), € 24.50 (25 wafers), € 23.00 (50 wafers), € 21.00 (150 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 100 nm | 270 / 270 | WTD40525250B1314S102 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 100 nm SiO2 | | | Price/wafer (net): € 33.20 (5 wafers), € 27.60 (10 wafers), € 22.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 200 nm | 401 / 401 | WTD40525250B1314S201 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 200 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 100 nm | 74 / 74 | WTD40525250P1314S101 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor) TTV < 10 μm, 1 - 10 Ohm cm, 100 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.01 | 90 nm | 158 / 158 | WTD40525255B1011S091 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 5 μm, 0.001 - 0.01 Ohm cm, 90 nm SiO2 | | | Price/wafer (net): € 34.00 (5 wafers), € 28.00 (10 wafers), € 22.00 (25 wafers), € 21.00 (50 wafers), € 20.00 (100 wafers), € 19.50 (150 wafers) (plus packaging / shipping) | |
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| Test | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 280 nm | 25 / 25 | WTM40525250B1050S281 | | | | Test Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 10 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), box has already been opened in clean room for SiO2 thickness measurements | | | Price/wafer (net): on request | |
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| Dummy3 | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 280 nm | 234 / 234 | WTV40525250B1050S281 | | | | Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film | | | Price/wafer (net): € 20.00 (25 wafers), € 18.00 (50 wafers), € 16.00 (100 wafers), € 14.00 (200 wafers) (plus packaging / shipping). One carrier with 9 wafer is also available. | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | double-side | 350 ± 15 | | 10000 - 100000 | 300 nm | 17 / 17 | WWA40350150X1718SNN1 | | | | Prime FZ-Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 350 ± 15 μm, (100), 2-side polished, TTV < 10 μm, 10000 - 100000 Ohm cm, 300 nm thermal SiO2 (on both sides) | | | Price/wafer (net): € 74.00 (5 wafers), € 68.00 (10 wafers), € 62.00 (25 wafers), € 60.00 (50 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | double-side | 525 ± 15 | Boron | 1 - 10 | 300 nm | 65 / 65 | WWA40525150B1314SNN2 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 35.20 (5 wafers), € 29.60 (10 wafers), € 24.00 (25 wafers), € 23.00 (50 wafers), € 22.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | double-side | 525 ± 25 | Phosphor | 1 - 10 | 5000 nm | 17 / 117 | WWA40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 5000 nm SiO2 | | | Price/wafer (net): € 83.20 (5 wafers), € 77.60 (10 wafers), € 72.00 (25 wafers), € 60.00 (50 wafers), € 59.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Arsenic | 0.001 - 0.005 | 300 nm | 211 / 211 | WWD40525250A1050S301 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Arsenic), 0.001 - 0.005 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 32.20 (5 wafers), € 26.60 (10 wafers), € 21.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 300 nm | 421 / 421 | WWD40525250B1314S302 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 500 nm | 411 / 411 | WWD40525250B1314S501 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 500 nm SiO2 | | | Price/wafer (net): € 31.20 (5 wafers), € 25.60 (10 wafers), € 20.00 (25 wafers), € 18.00 (50 wafers), € 17.00 (100 wafers), € 16.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 1000 nm | 225 / 225 | WWD40525250B1314SXX1 | | | | Prime Si + SiO2 (dry/wet/dry)-Wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 37.20 (5 wafers), € 31.60 (10 wafers), € 26.00 (25 wafers), € 24.00 (50 wafers), € 22.00 (100 wafers), € 20.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 1500 nm | 253 / 253 | WWD40525250B1314SXX3 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 1500 nm SiO2 | | | Price/wafer (net): € 39.20 (5 wafers), € 33.60 (10 wafers), € 28.00 (25 wafers), € 27.00 (50 wafers), € 26.00 (100 wafers), € 25.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 2000 nm | 195 / 195 | WWD40525250B1314SXX6 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2000 nm SiO2 | | | Price/wafer (net): € 47.20 (5 wafers), € 41.60 (10 wafers), € 36.00 (25 wafers), € 34.50 (50 wafers), € 33.00 (100 wafers), € 32.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 5000 nm | 70 / 70 | WWD40525250B1314SXX8 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), TTV < 10 μm, 1 - 10 Ohm cm, 5000 nm SiO2 | | | Price/wafer (net): on request | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 1000 nm | 125 / 125 | WWD40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 39.20 (5 wafers), € 33.60 (10 wafers), € 28.00 (25 wafers), € 26.00 (50 wafers), € 24.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 2280 nm | 50 / 50 | WWD40525250P1314SXX2 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor), TTV < 10 μm, 1 - 10 Ohm cm, 2280 nm SiO2 +/- 5 % | | | Price/wafer (net): € 61.00 (5 wafers), € 55.00 (10 wafers), € 49.00 (25 wafers), € 46.00 (50 wafers), € 44.00 (100 wafers), € 42.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | | 1000 - 100000 | 300 nm | 0 / 97 | WWD40525250X1618S301 | | | | Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, TTV < 10 μm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry | | | Price/wafer (net): € 69.20 (5 wafers), € 63.60 (10 wafers), € 58.00 (25 wafers), € 54.00 (50 wafers), € 50.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 625 ± 25 | Phosphor | 10 - 20 | 1000 nm | 149 / 149 | WWD40625250P1424SXX1 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 625 ± 25 μm, (100), 1-side polished, n-type (Phosphor) TTV < 10 μm, 10 - 20 Ohm cm, 1000 nm SiO2 +/- 10 %, single flat 32,5 +/- 2,5 mm, no second flat | | | Price/wafer (net): € 38.50 (5 wafers), € 32.50 (10 wafers), € 26.50 (25 wafers), € 24.50 (50 wafers), € 22.50 (100 wafers), € 18.50 (300 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (111) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 1000 nm | 1 / 1 | WWF40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (111), 1-side polished, n-type (Phosphor) TTV < 10 μm, 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 37.20 (5 wafers), € 31.60 (10 wafers), € 26.00 (25 wafers), € 24.00 (50 wafers), € 22.00 (100 wafers) (plus packaging / shipping) | |
Interested in an offer? Please send us an e-mail with the article numbers(s) (20-digit code in the right column of the table above) and number to info@microchemicals.com
1 available when this list has been revised
2 available + ordered (= available in typically few weeks)
3 Wider specified, rather cheap wafers for e. g. resist coating tests or start-up experiments for new litho-processes.
4 prices subject to change; while stocks last.
5 possibly available on demand within approx. 1 - 2 weeks.
We try to revise this stock list daily or weekly, but we cannot guarantee that it's always up-to-date.
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